Title :
Trends in the design of spectroscopy amplifiers for room temperature solid State detectors
Author :
Manfredi, Pier Francesco ; Re, Valerio
fDate :
6/1/2004 12:00:00 AM
Abstract :
This paper discusses the present trends in the design of low-noise front-end systems for room temperature semiconductor detectors. The technological advancement provided by submicron CMOS and BiCMOS processes is examined from several points of view. The noise performances are a fundamental issue in most detector applications and suitable attention is devoted to them for the purpose of judging whether or not the present processes supersede the solutions featuring a field-effect transistor as a front-end element. However, other considerations are also important in judging how well a monolithic technology suits the front-end design. Among them, the way a technology lends itself to the realization of additional functions, for instance, the charge reset in a charge-sensitive loop or the time-variant filters featuring the special weighting functions that may be requested in some applications of CdTe or CZT detectors.
Keywords :
MOSFET; amplifiers; junction gate field effect transistors; noise; nuclear electronics; particle spectrometers; semiconductor counters; 293 to 298 K; CZT detector; CdTe detector; JFET; MOSFET; charge reset; charge-sensitive loop; field-effect transistor; low-noise front-end electronics; monolithic technology; noise performance; room temperature solid state detector; semiconductor detector; spectroscopy amplifier design; submicron BiCMOS process; submicron CMOS process; time-variant filter; BiCMOS integrated circuits; CMOS process; CMOS technology; Detectors; FETs; Filters; Semiconductor device noise; Solid state circuits; Spectroscopy; Temperature; Front-end electronics; JFET; MOSFET; noise;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2004.829539