Title :
Photoelectrochemical laser interference etching for fabrication of 235 nm diffraction gratings on n-InP
Author_Institution :
Institute of Microwave Technology, Stockholm, Sweden
Abstract :
First-order diffraction gratings for 1.55 ¿m DFB/DBR lasers have been fabricated by photoelectrochemical laser interference etching directly on n-InP substrates (001) with high uniformity and reproducibility. A profile depth of 75 nm was obtained for symmetrical triangular profiles in the (110) plane. In the (110) plane the profiles became asymmetrically U-shaped with a depth of 80 nm.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; etching; indium compounds; 1.55 micron; 75 nm; 80 nm; DFB DBR lasers; InP; diffraction gratings; first order diffraction gratings; photoelectrochemical laser interference etching; profile depth; reproducibility; symmetrical triangular profiles; uniformity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870470
