Title :
High-power CW operation of 780 nm T3 laser diodes
Author :
Shima, Akio ; Yamawaki, Tasuku ; Saito, Hiroshi ; Matsubara, H. ; Murakami, Toshiyuki ; Ohtaki, K. ; Kumabe, H. ; Susaki, W.
Author_Institution :
Mitsubishi Electric Corporation, LSI R&D Laboratory, Itami, Japan
Abstract :
Stable laser operation at over 100 mW in the wavelength range of 780nm has been achieved by the T3 structure. The CW light output power at room temperature was over 160mW. The narrow beam divergence of low ellipticity has been realised. The lasers have been in operation for more than 800h at 40mW at 60°C with no significant degradation.
Keywords :
semiconductor junction lasers; 160 mW; 40 mW; 60 degC; 780 nm; 800 h; CW light output power; CW operation; T3 laser diodes; T3 structure; narrow beam divergence; room temperature; semiconductor lasers; thin tapered-thickness active layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870480
