• DocumentCode
    1033658
  • Title

    High-power CW operation of 780 nm T3 laser diodes

  • Author

    Shima, Akio ; Yamawaki, Tasuku ; Saito, Hiroshi ; Matsubara, H. ; Murakami, Toshiyuki ; Ohtaki, K. ; Kumabe, H. ; Susaki, W.

  • Author_Institution
    Mitsubishi Electric Corporation, LSI R&D Laboratory, Itami, Japan
  • Volume
    23
  • Issue
    13
  • fYear
    1987
  • Firstpage
    672
  • Lastpage
    674
  • Abstract
    Stable laser operation at over 100 mW in the wavelength range of 780nm has been achieved by the T3 structure. The CW light output power at room temperature was over 160mW. The narrow beam divergence of low ellipticity has been realised. The lasers have been in operation for more than 800h at 40mW at 60°C with no significant degradation.
  • Keywords
    semiconductor junction lasers; 160 mW; 40 mW; 60 degC; 780 nm; 800 h; CW light output power; CW operation; T3 laser diodes; T3 structure; narrow beam divergence; room temperature; semiconductor lasers; thin tapered-thickness active layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870480
  • Filename
    4257814
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1033658