DocumentCode :
1033718
Title :
A word-organized NDRO memory using fluted magnetic films
Author :
Billing, H. ; Rüdiger, A. ; Schilling, R.
Author_Institution :
Max Planck Institute for physics, Munich, Germany.
Volume :
2
Issue :
3
fYear :
1966
fDate :
9/1/1966 12:00:00 AM
Firstpage :
520
Lastpage :
523
Abstract :
Fluted films are thin permalloy films consisting of narrow parallel strips ( \\approx 10\\mu wide) of alternating thickness (typically D_{0} = 200 Å, D_{1} = 400 ... 500 Å). These strips, parallel to the easy direction ( x axis), introduce a microshape anisotropy which stabilizes hard direction locked states. The two hard direction states with either positive or negative y component of magnetization are used to characterize binary one or zero, respectively. In a word-organized memory, the extraordinary stability of these locked states can be used for a nondestructive readout. For write-in, overlapping of a word field with an advanced (one) or a delayed (zero) bit field of equal polarity is required. Word field or bit field alone leaves the locked states unchanged. Thus, in selected elements along a word line write-in is possible. Readout and write-in occur by the inherently fast magnetization rotation. The attainable speed of a readout is essentially a question of compensation of capacitive and inductive noise in the sense line. By use of dummy lines and fast differential sense amplifiers, sufficient noise cancellation appears possible to allow readout repetition rates of 50 Mc/s or above.
Keywords :
Magnetic film memories; NDRO memories; Anisotropic magnetoresistance; Magnetic anisotropy; Magnetic films; Noise cancellation; Perpendicular magnetic anisotropy; Saturation magnetization; Semiconductor device noise; Semiconductor films; Strips; Switches;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1966.1065907
Filename :
1065907
Link To Document :
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