DocumentCode
1033742
Title
Narrow pulse measurement of drain characteristics of GaAs MESFETs
Author
Barton, T.M. ; Snowden, C.M. ; Richardson, J.R. ; Ladbrooke, P.H.
Author_Institution
University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
Volume
23
Issue
13
fYear
1987
Firstpage
686
Lastpage
687
Abstract
A measurement technique is presented which uses narrow, fast-rise-time pulses applied to both the gate and the drain of a GaAs MESFET to obtain the drain characteristics of the device. This allows the characteristics of the device to be obtained which correspond to frequencies above those at which surface and substrate traps can respond. The resulting characteristics show significant departures from those obtained using conventional long pulse and DC measurement techniques.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; GaAs; GaAs MESFETs; characterisation; fast-rise-time pulses; high frequency behaviour; measurement technique; narrow pulse measurements; pulse measurement of drain characteristics; substrate traps; surface traps;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870489
Filename
4257823
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