Title :
Emerging memory devices
Author :
Galatsis, Kosmas ; Wang, Kang ; Botros, Youssry ; Yang, Yang ; Xie, Ya-Hong ; Stoddart, J.F. ; Kaner, R.B. ; Cengiz Ozhan ; Liu, Jianlin ; Ozkan, Cengiz ; Zhou, Chongwu ; Kim, Ki Wook
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA
Abstract :
Each memory device presented has its unique range of advantages and challenges. DRAM and FLASH have radically different characteristics; hence, they are used for different applications. Accordingly, the search for memory devices beyond CMOS comes with an important caveat: different memory for different applications. FENA´s research path will continue to focus on improving our presented memory devices, and integrating with logic elements, while exploring other emerging memory devices based on nanomaterials, nanostructures, and the next generation of low-cost assembly techniques
Keywords :
CMOS digital integrated circuits; DRAM chips; flash memories; nanostructured materials; CMOS; DRAM; FLASH; logic elements; memory devices; nanomaterials; nanostructures; next generation low cost assembly; Costs; Magnetic tunneling; Manufacturing; Nanomaterials; Nanostructures; Nonvolatile memory; Random access memory; Read-write memory; Semiconductor materials; Silver;
Journal_Title :
Circuits and Devices Magazine, IEEE
DOI :
10.1109/MCD.2006.1657845
