Emerging memory devices

Author

Galatsis, Kosmas ; Wang, Kang ; Botros, Youssry ; Yang, Yang ; Xie, Ya-Hong ; Stoddart, J.F. ; Kaner, R.B. ; Cengiz Ozhan ; Liu, Jianlin ; Ozkan, Cengiz ; Zhou, Chongwu ; Kim, Ki Wook

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA

Volume

22

Issue

3

fYear

2006

Firstpage

12

Lastpage

21

Abstract

Each memory device presented has its unique range of advantages and challenges. DRAM and FLASH have radically different characteristics; hence, they are used for different applications. Accordingly, the search for memory devices beyond CMOS comes with an important caveat: different memory for different applications. FENA´s research path will continue to focus on improving our presented memory devices, and integrating with logic elements, while exploring other emerging memory devices based on nanomaterials, nanostructures, and the next generation of low-cost assembly techniques

Keywords

CMOS digital integrated circuits; DRAM chips; flash memories; nanostructured materials; CMOS; DRAM; FLASH; logic elements; memory devices; nanomaterials; nanostructures; next generation low cost assembly; Costs; Magnetic tunneling; Manufacturing; Nanomaterials; Nanostructures; Nonvolatile memory; Random access memory; Read-write memory; Semiconductor materials; Silver;

fLanguage

English

Journal_Title

Circuits and Devices Magazine, IEEE

Publisher

ieee

ISSN

8755-3996

Type

jour

DOI

10.1109/MCD.2006.1657845

Filename

1657845