Title :
Low-loss single-mode InP/InGaAsP waveguides grown by MOVPE
Author :
McIlroy, P.W.A. ; Rodgers, P.M. ; Singh, J.S. ; Spurdens, P.C. ; Henning, I.D.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
Losses as low as 0.4 ± 0.1 dB/cm for TE- and 0.65 ± 0.1 dB/ cm for TM-polarised light have been observed in tightly confined single-mode InP/lnGaAsP waveguides grown by MOVPE and processed using RIE. These are the lowest losses reported for InP-based waveguides. The structure could be used to make low-loss modulators for communications wavelengths.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical losses; optical modulation; optical waveguides; semiconductor growth; vapour phase epitaxial growth; 0.4 dB; 0.65 dB; III-V semiconductor TE-polarised light; InP-InGaAsP; MOVPE; RIE; TM-polarised light; communications wavelengths; integrated optics; low-loss modulators; optical waveguides; single-mode; vapour phase epitaxial growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870499
