DocumentCode :
1033927
Title :
On thermal and excess currents in GaSb tunnel diodes
Author :
Nanavati, R.P. ; Eisencraft, Marcio
Volume :
15
Issue :
10
fYear :
1968
fDate :
10/1/1968 12:00:00 AM
Firstpage :
796
Lastpage :
797
Abstract :
Experimental results presented here show that excess and thermal currents coexist independent of one another. Excess current behaves according to an analytical expression based on linear temperature dependence of built-in voltage. Thermal current changes from recombination-generation at low voltage to normal injection current at higher voltages.
Keywords :
Current measurement; Diodes; Gallium arsenide; Low voltage; Photonic band gap; Predictive models; Pulse measurements; Temperature dependence; Temperature sensors; Tunneling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16520
Filename :
1475422
Link To Document :
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