DocumentCode
1033951
Title
Optically bistable operation in InGaAs/lnAIAs MOW laser diodes using resonant tunnelling effect
Author
Kawamura, Yuriko ; Wakita, Ken ; Asahi, H. ; Oe, Katsutoshi
Author_Institution
NTT Atsugi Electrical Communication Laboratories, Atsugi, Japan
Volume
23
Issue
14
fYear
1987
Firstpage
719
Lastpage
721
Abstract
A new type of optically bistable operation using a resonant tunnelling effect has been achieved for InGaAs/lnAIAs MQW laser diodes for the first time. A clear optical bistability with a large on/off ratio was observed in the light output/voltage characteristics. Optical memory operation was also obtained with this MQW laser diode.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical bistability; semiconductor junction lasers; tunnelling; InGaAs-InAlAs laser; MQW laser diodes; light output/voltage characteristics; on/off ratio; optical memory operation; optically bistable operation; resonant tunnelling effect; semiconductor laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870511
Filename
4257846
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