Title :
Optically bistable operation in InGaAs/lnAIAs MOW laser diodes using resonant tunnelling effect
Author :
Kawamura, Yuriko ; Wakita, Ken ; Asahi, H. ; Oe, Katsutoshi
Author_Institution :
NTT Atsugi Electrical Communication Laboratories, Atsugi, Japan
Abstract :
A new type of optically bistable operation using a resonant tunnelling effect has been achieved for InGaAs/lnAIAs MQW laser diodes for the first time. A clear optical bistability with a large on/off ratio was observed in the light output/voltage characteristics. Optical memory operation was also obtained with this MQW laser diode.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical bistability; semiconductor junction lasers; tunnelling; InGaAs-InAlAs laser; MQW laser diodes; light output/voltage characteristics; on/off ratio; optical memory operation; optically bistable operation; resonant tunnelling effect; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870511
