DocumentCode
1033980
Title
Characterization and modeling of IMPATT oscillators
Author
Kramer, Norman B.
Author_Institution
Hughes Research Laboratories, Malibu, Calif.
Volume
15
Issue
11
fYear
1968
fDate
11/1/1968 12:00:00 AM
Firstpage
838
Lastpage
846
Abstract
A method has been found for large-signal characterization of IMPATT diodes. Waveguides of different heights are used so that the effect on efficiency of load impedance at a fixed oscillation frequency can be observed. Experimental large-signal admittance plane plots for two p-n diodes operating in Ku-band are presented. A nonlinear phenomenological model of an IMPATT oscillator is developed which correctly predicts the experimentally observed dependence of efficiency on load conductance and admittance plane characteristics. In addition to aiding the visualization of oscillator performance, analysis of this parallel circuit model shows that efficiency increases rapidly with small-signal negative conductance.
Keywords
Admittance; Circuit testing; Diodes; Frequency; Impedance; Oscillators; Packaging; Predictive models; RLC circuits; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1968.16524
Filename
1475426
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