DocumentCode :
1033989
Title :
High-purity germanium-sulphide glass for optoelectronic applications synthesised by chemical vapour deposition
Author :
Huang, C.-C. ; Hewak, D.W.
Author_Institution :
Optoelectronics Res. Centre, Univ. of Southampton, UK
Volume :
40
Issue :
14
fYear :
2004
fDate :
7/8/2004 12:00:00 AM
Firstpage :
863
Lastpage :
865
Abstract :
Germanium-sulphide glass has been fabricated directly by chemical vapour deposition in the form of thin films on semiconductor substrates and as a bulk glass. Analysis shows a high-purity amorphous material, which has high potential for the fabrication of the chalcogenide optical waveguides and devices.
Keywords :
Raman spectra; X-ray diffraction; chalcogenide glasses; chemical vapour deposition; germanium compounds; optical fabrication; optical films; optical waveguides; semiconductor growth; semiconductor thin films; GeSSi; Raman spectra; X-ray diffraction; bulk glass; chalcogenide optical waveguides; chemical vapour deposition; germanium sulphide glass; high purity germanium sulphide glass; high-purity amorphous material; optical device; optoelectronic applications; semiconductor substrates;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20045141
Filename :
1315496
Link To Document :
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