Title :
Forward transient characteristics of gold-doped silicon p+-n-n+diodes
Author :
Peters, D.W. ; Shipley, M.
Author_Institution :
Union Carbide Electronics, Mountain View, Calif.
fDate :
11/1/1968 12:00:00 AM
Abstract :
The transient response of high-resistivity long-base low-lifetime p+-n-n+silicon diodes was examined experimentally. The diodes were doped with gold in order to reduce the minority carrier lifetime. Voltage oscillations were observed at different current levels. A large inductive effect was shown to exist when the diode was forward biased in a negative resistance region of the dc voltage-current characteristics.
Keywords :
Capacitance; Charge carrier lifetime; Frequency; Gold; P-i-n diodes; Semiconductor diodes; Silicon; Steady-state; Transient response; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16526
