• DocumentCode
    1033997
  • Title

    Forward transient characteristics of gold-doped silicon p+-n-n+diodes

  • Author

    Peters, D.W. ; Shipley, M.

  • Author_Institution
    Union Carbide Electronics, Mountain View, Calif.
  • Volume
    15
  • Issue
    11
  • fYear
    1968
  • fDate
    11/1/1968 12:00:00 AM
  • Firstpage
    852
  • Lastpage
    854
  • Abstract
    The transient response of high-resistivity long-base low-lifetime p+-n-n+silicon diodes was examined experimentally. The diodes were doped with gold in order to reduce the minority carrier lifetime. Voltage oscillations were observed at different current levels. A large inductive effect was shown to exist when the diode was forward biased in a negative resistance region of the dc voltage-current characteristics.
  • Keywords
    Capacitance; Charge carrier lifetime; Frequency; Gold; P-i-n diodes; Semiconductor diodes; Silicon; Steady-state; Transient response; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1968.16526
  • Filename
    1475428
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1033997