Title :
GaAs monolithic Schottky junction pairs for W-band crossbar mixers
Author :
Anand, Y. ; Christou, Alex
Author_Institution :
M/A-COM Inc., Burlington, USA
Abstract :
A GaAs monolithic planar chip consisting of two antiparallel Schottky junctions has been designed, processed and tested as a millimetre-wave crossbar mixer. The planar chip exhibited a broadband RF performance with a low conversion loss of 5.2013;70dB and noise temperature of 750 K at 94 GHz. The structure also exhibits a high burnout capability at W-band frequencies.
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; microwave integrated circuits; mixers (circuits); monolithic integrated circuits; 5.7 dB; 750 K; 94 GHz; GaAs monolithic planar chip; MM-wave mixer; Schottky junction pairs; W-band crossbar mixers; antiparallel Schottky junctions; broadband RF performance; conversion loss; high burnout capability; noise temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870516
