Title :
Laser-assisted thermally enhanced InP via etching for microwave device applications
Author :
Ghandour, Osman A. ; Scarmozzino, Robert ; Osgood, Richard M., Jr. ; Hooper, William W.
Author_Institution :
Microelectron Sci. Lab., Columbia Univ., New York, NY, USA
fDate :
11/1/1993 12:00:00 AM
Abstract :
A laser-based technique for thermally enhanced rapid etching of via holes through Fe-doped semi-insulating InP substrates is described. The process produces steep-walled closely-spaced via holes in etch times as short as 3-5 s/via in 100-μm-thick substrates. This technique is key to the fabrication of low-inductance metallized via contacts critical for high-speed microwave and millimeter-wave devices and circuits. The laser-based technique is material selective, allowing both through-wafer and blind-hole etching which is terminated on metal circuit contacts. Via structures have been fabricated on semi-insulating InP substrates patterned with millimeter-wave device geometries
Keywords :
etching; indium compounds; iron; laser beam applications; solid-state microwave devices; 100 micron; InP:Fe; blind-hole etching; etch times; laser-assisted thermally-enhanced via etching; low-inductance metallized via contacts; metal circuit contacts; microwave device applications; millimeter-wave devices; semi-insulating substrates; steep-walled closely-spaced via holes; through-wafer etching; Etching; Indium phosphide; Masers; Metallization; Microwave circuits; Microwave devices; Microwave theory and techniques; Millimeter wave devices; Optical device fabrication; Rapid thermal processing;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
