Title :
Advances in electrical properties of plasma-grown oxides of silicon
Author :
Taylor, S. ; Eccleston, W. ; Watkinson, P.
Author_Institution :
University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
Abstract :
Oxides have been grown on silicon using an oxygen/chlorine plasma at temperatures of 400°C and below. The electrical breakdown strength of the oxides together with the interface and bulk oxide properties after low-temperature annealing are considered. The electrical properties are shown to be more than adequate for device applications.
Keywords :
electric breakdown of solids; elemental semiconductors; interface electron states; oxidation; semiconductor-insulator boundaries; silicon; silicon compounds; MOS capacitors; O2-Cl2 plasma; Si; Si-SiO2; electrical breakdown strength; electrical properties; interface properties; interface states; low-temperature annealing; oxidation; plasma-grown oxides; semiconductor insulator boundary;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870519
