• DocumentCode
    1034027
  • Title

    Advances in electrical properties of plasma-grown oxides of silicon

  • Author

    Taylor, S. ; Eccleston, W. ; Watkinson, P.

  • Author_Institution
    University of Liverpool, Department of Electrical Engineering & Electronics, Liverpool, UK
  • Volume
    23
  • Issue
    14
  • fYear
    1987
  • Firstpage
    732
  • Lastpage
    733
  • Abstract
    Oxides have been grown on silicon using an oxygen/chlorine plasma at temperatures of 400°C and below. The electrical breakdown strength of the oxides together with the interface and bulk oxide properties after low-temperature annealing are considered. The electrical properties are shown to be more than adequate for device applications.
  • Keywords
    electric breakdown of solids; elemental semiconductors; interface electron states; oxidation; semiconductor-insulator boundaries; silicon; silicon compounds; MOS capacitors; O2-Cl2 plasma; Si; Si-SiO2; electrical breakdown strength; electrical properties; interface properties; interface states; low-temperature annealing; oxidation; plasma-grown oxides; semiconductor insulator boundary;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870519
  • Filename
    4257854
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1034027