DocumentCode
1034035
Title
Effect of process parameters on plasma-enhanced chemical vapour deposition of tungsten
Author
Hodson, C.M.T. ; Wood, Jo
Author_Institution
University of York, Department of Electronics, York, UK
Volume
23
Issue
14
fYear
1987
Firstpage
733
Lastpage
735
Abstract
Films of tungsten have been deposited on substrates of silicon by plasma-enhanced chemical vapour deposition, using the reaction of tungsten hexafluoride and hydrogen. The sheet resistance and adhesion of the films has been studied as a function of substrate temperature, gas composition and flow rate, and other reaction parameters, and an activation energy of 0.23 eV is proposed for the reaction. Reliable tungsten films with sheet resistances of the order of 1¿/¿ can be produced.
Keywords
adhesion; chemical vapour deposition; electronic conduction in metallic thin films; metallisation; plasma deposition; tungsten; Si substrate; W-Si; activation energy; adhesion; flow rate; gas composition; metallisation; plasma enhanced CVD; process parameters; sheet resistance; substrate temperature;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870520
Filename
4257855
Link To Document