DocumentCode :
1034037
Title :
Piezoelectric gate for a two-dimensional electron system transport in LiNbO/sub 3/-GaAs/AlGaAs sandwich structures
Author :
Korotchenkov, Oleg A. ; Polovina, Oleksiy I. ; Kurylyuk, Vasyl V.
Author_Institution :
Kiev Nat. Univ., Kiev
Volume :
54
Issue :
12
fYear :
2007
fDate :
12/1/2007 12:00:00 AM
Firstpage :
2529
Lastpage :
2534
Abstract :
Standing-wave piezoelectric fields in the LiNbO3 driving plate are used to form depleted and accumulated electron densities in GaAs/AlGaAs quantum wells (QWs). The photoluminescence spectrum of the two-dimensional electron system varies both spatially and temporally, exhibiting an electron-hole plasma recombination and exciton and trion emissions at large and small electron densities, respectively. Controlling the piezoelectric field component perpendicular to the QW layers offers a versatile tool to achieve the spatially indirect exciton luminescence in double QW structures.
Keywords :
III-V semiconductors; aluminium compounds; electron density; electron-hole recombination; gallium arsenide; lithium compounds; photoluminescence; quantum wells; sandwich structures; solid-state plasma; trions; two-dimensional electron gas; LiNbO3-GaAs-AlGaAs; electron densities; electron-hole plasma recombination; exciton emission; photoluminescence spectrum; piezoelectric gate; quantum wells; sandwich structures; standing-wave piezoelectric fields; trion emissions; two-dimensional electron system; Boundary conditions; Electric potential; Electron emission; Excitons; Ferroelectric materials; Gallium arsenide; Photoluminescence; Plasma density; Sandwich structures; Tensile stress;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2007.572
Filename :
4430036
Link To Document :
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