Piezoelectric gate for a two-dimensional electron system transport in LiNbO/sub 3/-GaAs/AlGaAs sandwich structures

Author

Korotchenkov, Oleg A. ; Polovina, Oleksiy I. ; Kurylyuk, Vasyl V.

Author_Institution

Kiev Nat. Univ., Kiev

Volume

54

Issue

12

fYear

2007

fDate

12/1/2007 12:00:00 AM

Firstpage

2529

Lastpage

2534

Abstract

Standing-wave piezoelectric fields in the LiNbO₃ driving plate are used to form depleted and accumulated electron densities in GaAs/AlGaAs quantum wells (QWs). The photoluminescence spectrum of the two-dimensional electron system varies both spatially and temporally, exhibiting an electron-hole plasma recombination and exciton and trion emissions at large and small electron densities, respectively. Controlling the piezoelectric field component perpendicular to the QW layers offers a versatile tool to achieve the spatially indirect exciton luminescence in double QW structures.

Keywords

III-V semiconductors; aluminium compounds; electron density; electron-hole recombination; gallium arsenide; lithium compounds; photoluminescence; quantum wells; sandwich structures; solid-state plasma; trions; two-dimensional electron gas; LiNbO₃-GaAs-AlGaAs; electron densities; electron-hole plasma recombination; exciton emission; photoluminescence spectrum; piezoelectric gate; quantum wells; sandwich structures; standing-wave piezoelectric fields; trion emissions; two-dimensional electron system; Boundary conditions; Electric potential; Electron emission; Excitons; Ferroelectric materials; Gallium arsenide; Photoluminescence; Plasma density; Sandwich structures; Tensile stress;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/TUFFC.2007.572

Filename

4430036