Title :
High-efficiency X-band GaAs IMPATT diodes
fDate :
11/1/1968 12:00:00 AM
Abstract :
Epitaxial GaAs diodes have been fabricated giving 651mW CW output power at 10 GHz under room temperature operation. A dc to RF efficiency of 10.1 percent was obtained from a diode operating CW while the measured output of another diode was over 20 mW for 3 mA dc with 70-volt biasing.
Keywords :
Capacitance; Circuit testing; Epitaxial layers; Etching; Fixtures; Frequency; Gallium arsenide; Power generation; Schottky diodes; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1968.16538
