DocumentCode :
1034118
Title :
Ultra-high-power quasi-CW monolithic laser diode arrays with high power conversion efficiency
Author :
Harnagel, G.L. ; Cross, P.S. ; Lennon, C.R. ; Devito, M. ; Scifres, D.R.
Author_Institution :
Spectra Diode Laboratories, San Jose, USA
Volume :
23
Issue :
14
fYear :
1987
Firstpage :
743
Lastpage :
744
Abstract :
An optical power output of 134 W from one facet and power conversion efficiencies as high as 49% have been obtained from monolithic AlGaAs laser arrays with 1 cm emitting widths for 150^s pulse widths (quasi-CW operation). The arrays have etched grooves to prevent transverse lasing and amplified spontaneous emission.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; semiconductor junction lasers; 1 cm; 134 W; 49 percent; etched grooves; monolithic AlGaAs laser arrays; optical power output; power conversion efficiency; pulse widths; quasi-CW operation; semiconductor laser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870527
Filename :
4257862
Link To Document :
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