DocumentCode
1034120
Title
Improvement in dielectric and tunable properties of Fe-doped Ba0.6Sr0.4TiO3 thin films grown by pulsed-laser deposition
Author
Gong, Jia ; Cheng, Jinrong ; Zhu, Weicheng ; Yu, Shengwen ; Wu, Wenbiao ; Meng, Zhongyan
Author_Institution
Shanghai Univ., Shanghai
Volume
54
Issue
12
fYear
2007
fDate
12/1/2007 12:00:00 AM
Firstpage
2579
Lastpage
2582
Abstract
Fe-doped Ba0.6Sr0.4TiO3 (BST) thin films were prepared on Pt/Si substrates by the pulsed-laser deposition method. The concentrations of Fe dopants vary from 0.1 mol% to 1.0 mol%. Our results indicate that a certain amount of Fe dopants can decrease the dielectric loss of BST thin films without causing the significant reduction of the tunability. The leakage current of BST thin films also was reduced by the addition of Fe dopants. BST thin films doped with 0.3 mol% Fe ions show a minimum dielectric loss of 0.88% at 106 Hz, which is 1.7% for the undoped BST films. Moreover, the 0.3 mol% Fe-doped BST films reveal a maximum figure of merit (FOM) of 51, indicating the improved comprehensive dielectric and tunable properties.
Keywords
barium compounds; dielectric losses; dielectric thin films; iron; leakage currents; pulsed laser deposition; strontium compounds; Ba0.6Sr0.4TiO3:Fe; dielectric loss; dielectric properties; leakage current; pulsed-laser deposition; thin films; Binary search trees; Dielectric losses; Dielectric measurements; Dielectric substrates; Dielectric thin films; Iron; Leakage current; Semiconductor thin films; Sputtering; Strontium; Ceramics; Crystallization; Electric Impedance; Iron; Lasers; Materials Testing; Membranes, Artificial;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/TUFFC.2007.580
Filename
4430044
Link To Document