DocumentCode
1034123
Title
The effect of illumination on Gunn oscillations in epitaxial GaAs
Author
Haydl, W.H. ; Solomon, Randall
Volume
15
Issue
11
fYear
1968
fDate
11/1/1968 12:00:00 AM
Firstpage
941
Lastpage
942
Abstract
Coherent Gunn oscillations have been observed in long samples of epitaxial GaAs grown by both the solution and the vapor-transport methods on semi-insulating GaAs substrates. Samples of low carrier concentrations which do not exhibit Gunn oscillations, and samples which oscillate incoherently in the dark, oscillate coherently when illuminated. Illumination is observed to lead to an improvement in the peak current-to-valley current ratio.
Keywords
Bars; Diodes; Electrodes; Gallium arsenide; Geometry; Gunn devices; Lighting; Substrates; Temperature distribution; Tin;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1968.16540
Filename
1475442
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