Title :
Excellent ferroelectricity of thin poly(vinylidene fluoride-trifluoroethylene) copolymer films and low voltage operation of capacitors and diodes
Author :
Fujisaki, Sumiko ; Fujisaki, Yoshihisa ; Ishiwara, Hiroshi
Author_Institution :
Tokyo Inst. of Technol., Yokohama
fDate :
12/1/2007 12:00:00 AM
Abstract :
Characteristics of metal-ferroelectrics-metal (MFM) capacitors and metal-ferroelectrics-insulator-semi-conductor (MFIS) diodes with poly(vinylidene fluoride-trifiuoroethylene) [P(VDF-TrFE)] copolymer films thinner than 100 nm were investigated. The films were prepared by spin-cast process and were annealed at 140degC in air for crystallization. The ferroelectric properties are equivalent to those of oxide ferroelectrics, even under low voltage or high frequency operation.
Keywords :
MFIS structures; annealing; capacitors; casting; crystallisation; diodes; ferroelectric thin films; field effect transistors; polymer blends; polymer films; annealing; crystallization; ferroelectric field effect transistor; ferroelectric thin copolymer films; metal-ferroelectrics-insulator-semiconductor diodes; metal-ferroelectrics-metal capacitors; poly(vinylidene fluoride-trifluoroethylene); spin-cast process; Annealing; Capacitors; Dielectrics and electrical insulation; Diodes; Ferroelectric films; Ferroelectric materials; Flash memory; Low voltage; Magnetic force microscopy; Polarization;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2007.583
