Title :
2.0 W CW X-band GaInP/GaAs heterojunction bipolar transistor
Author :
Liu, W. ; Kim, T. ; Khatizbadeh, A.
Author_Institution :
Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We report 2.0 W CW (continuous wave) output power at 9.5 GHz with a GaInP/GaAs HBT having a total emitter area of 2×500 μm2. The collector-emitter bias dependence and the frequency dependence of the large-signal performance of both the 2×400 and 2×500 μm2 unit cells are described. The uniformity of the output power and power-added efficiency is also discussed.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power transistors; solid-state microwave devices; 2 W; 9.5 GHz; CW output power; GaInP-GaAs; GaInP/GaAs; HBT; SHF; X-band; collector-emitter bias dependence; continuous wave output; frequency dependence; heterojunction bipolar transistor; large-signal performance; power-added efficiency; Cutoff frequency; Frequency measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Power generation; Power measurement; Scanning electron microscopy; Tuning; Voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
