Title :
Low temperature preparation of bismuth-related ferroelectrics powder and thin films by hydrothermal synthesis
Author :
Tho, Nguyen T. ; Inoue, Akihiro ; Noda, Minoru ; Okuyama, Masanori
Author_Institution :
Osaka Univ., Osaka
fDate :
12/1/2007 12:00:00 AM
Abstract :
Bi4Ti3O12 (BIT) thin films were prepared by low temperature hydrothermal synthesis on Pt/TiOx/SiO2/Si. Bi4Ti3O12 or TiO2 gel solution was formed and annealed at 350degC. The BIT thin films were crystallized as a Bi-layer structural ferroelectric. During the hydrothermal treatment, the TiO2 anatase (101) peak appears and seems to play the role as an intermediate layer. Randomly oriented BIT thin films were obtained. As a result, the BIT thin films have ferroelectric property. The as-deposited BIT thin films include spherical grains with the grain size of 120 nm.
Keywords :
annealing; bismuth compounds; crystallisation; ferroelectric thin films; grain size; nanostructured materials; powders; Bi-layer structural ferroelectrics; Bi4Ti3O12; Pt-TiOx-SiO2-Si; TiO2; anatase (101); annealing; crystallization; ferroelectric powder; ferroelectric thin films; gel solution; grain size; hydrothermal synthesis; spherical grains; Crystallization; Ferroelectric films; Ferroelectric materials; Powders; Random access memory; Semiconductor thin films; Sputtering; Temperature; Thin film circuits; Transistors; Bismuth; Crystallization; Electric Impedance; Electrochemistry; Materials Testing; Membranes, Artificial; Molecular Conformation; Nanostructures; Particle Size; Powders; Surface Properties; Temperature; Water;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2007.586
