DocumentCode
1034197
Title
Behavior of surface ions on semiconductor devices
Author
Schlegel, Earl S. ; Schnable, George L. ; Schwarz, Ruth F. ; Spratt, James P.
Author_Institution
Philco-Ford Corporation, Blue Bell, Pa.
Volume
15
Issue
12
fYear
1968
fDate
12/1/1968 12:00:00 AM
Firstpage
973
Lastpage
979
Abstract
A study of the effects and behavior of surface ions on planar semiconductor devices has extended the theoretical understanding to include the case in which the total mobile surface ion density is determined by the net surface ion density induced by the surface potential on the oxide. We describe a useful test structure for the measurement of surface ion behavior and cite its advantages. We have measured the effects of time, humidity, temperature, voltage, and the previous testing history of the device on the behavior of surface ions.
Keywords
Charge measurement; Conductivity; Current measurement; Equations; Humidity measurement; Semiconductor devices; Silicon; Snow; Testing; Time measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1968.16548
Filename
1475450
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