Title :
Buried-heterostructure diode lasers with in-situ-grown self-aligned GaAs mask for Zn diffusion
Author :
Mukai, Sonoyo ; Itoh, M. ; Watanabe, Manabu ; Itoh, Hayato ; Yajima, Hiroya
Author_Institution :
Electrotechnical Laboratory, Tsukuba, Japan
Abstract :
A simplified process for fabricating BH lasers is introduced, where a self-aligned mask for Zn diffusion is formed in situ during crystal growth. The current/light characteristics of the lasers are presented. The lasers are compared with DCPBH lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; BH lasers; GaAs-AlGaAs:Zn; LPE; Zn diffusion; current/light characteristics; self-aligned GaAs mask; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870535
