DocumentCode
1034209
Title
Avalanche drift instability in planar passivated p-n junctions
Author
Gurtler, Richard W.
Author_Institution
Motorola Semiconductor Products Division, Phoenix, Ariz.
Volume
15
Issue
12
fYear
1968
fDate
12/1/1968 12:00:00 AM
Firstpage
980
Lastpage
986
Abstract
Some factors which affect the breakdown voltage of planar passivated 
junctions and which influence breakdown drift instability are discussed. Experiments describing these phenomena are reported. An activation energy for walk-out recovery is given as approximately 0.35 eV. It is argued that charge motion parallel to and probably within the oxide-semiconductor interface is occurring. Experiments performed to verify this parallel charge drift are related which confirm the effect. Finally, evidence for a mobile negative species is given.
junctions and which influence breakdown drift instability are discussed. Experiments describing these phenomena are reported. An activation energy for walk-out recovery is given as approximately 0.35 eV. It is argued that charge motion parallel to and probably within the oxide-semiconductor interface is occurring. Experiments performed to verify this parallel charge drift are related which confirm the effect. Finally, evidence for a mobile negative species is given.Keywords
Avalanche breakdown; Breakdown voltage; Doping; Electric breakdown; Energy measurement; Face recognition; Insulation; P-n junctions; Silicon; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1968.16549
Filename
1475451
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