DocumentCode :
1034209
Title :
Avalanche drift instability in planar passivated p-n junctions
Author :
Gurtler, Richard W.
Author_Institution :
Motorola Semiconductor Products Division, Phoenix, Ariz.
Volume :
15
Issue :
12
fYear :
1968
fDate :
12/1/1968 12:00:00 AM
Firstpage :
980
Lastpage :
986
Abstract :
Some factors which affect the breakdown voltage of planar passivated 
junctions and which influence breakdown drift instability are discussed. Experiments describing these phenomena are reported. An activation energy for walk-out recovery is given as approximately 0.35 eV. It is argued that charge motion parallel to and probably within the oxide-semiconductor interface is occurring. Experiments performed to verify this parallel charge drift are related which confirm the effect. Finally, evidence for a mobile negative species is given.
junctions and which influence breakdown drift instability are discussed. Experiments describing these phenomena are reported. An activation energy for walk-out recovery is given as approximately 0.35 eV. It is argued that charge motion parallel to and probably within the oxide-semiconductor interface is occurring. Experiments performed to verify this parallel charge drift are related which confirm the effect. Finally, evidence for a mobile negative species is given.Keywords :
Avalanche breakdown; Breakdown voltage; Doping; Electric breakdown; Energy measurement; Face recognition; Insulation; P-n junctions; Silicon; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16549
Filename :
1475451
Link To Document :
