• DocumentCode
    1034214
  • Title

    Distributed-feedback, surface-emitting laser diode with lateral double heterostructure

  • Author

    Ogura, M. ; Mukai, Sonoyo

  • Author_Institution
    Electrochemical Laboratory, Tsukuba, Japan
  • Volume
    23
  • Issue
    14
  • fYear
    1987
  • Firstpage
    758
  • Lastpage
    760
  • Abstract
    The distributed-feedback, surface-emitting laser diode with lateral double heterostructure (LDH) is realised with the combination of molecular beam epitaxy (MBE) and selective liquid-phase-epitaxial (LPE) techniques. Stimulated emission with a spectrum width of 2¿3 nm was observed at the operating current of 100mA at ¿50°C, and 400 mA at room temperature.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; liquid phase epitaxial growth; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; stimulated emission; -50 degC; 100 mA; 400 mA; DFB laser; GaAs-AlGaAs laser; LPE; MBE; lateral double heterostructure; operating current; room temperature; semiconductor laser; stimulated emission; surface-emitting laser diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870537
  • Filename
    4257872
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1034214