DocumentCode :
1034218
Title :
Temperature dependence of the saturation current of MOST´s
Author :
Zuleeg, Rainer ; Lehovec, Kurt
Author_Institution :
McDonnell Douglas Corporation, Santa Monica, California
Volume :
15
Issue :
12
fYear :
1968
fDate :
12/1/1968 12:00:00 AM
Firstpage :
987
Lastpage :
989
Abstract :
The saturation current of 
-enhancement silicon MOST\´s has been investigated as function of temperature. The results are in reasonable agreement with a simple theoretical expression which takes into account the field dependence of electron mobility. It is shown that the effective incremental mobility becomes fairly independent of temperature, and varies inversely proportional to the gate voltage VG , if 
is about unity, where µ is the low-field drift mobility, υs , is the saturation drift velocity, and 
is the channel length.
-enhancement silicon MOST\´s has been investigated as function of temperature. The results are in reasonable agreement with a simple theoretical expression which takes into account the field dependence of electron mobility. It is shown that the effective incremental mobility becomes fairly independent of temperature, and varies inversely proportional to the gate voltage V is about unity, where µ is the low-field drift mobility, υ is the channel length.Keywords :
Capacitance; Character generation; Cooling; Current measurement; Electron mobility; Length measurement; Scattering; Silicon; Temperature dependence; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1968.16550
Filename :
1475452
Link To Document :
