Title :
U-band MMIC HBT DRO
Author :
Chen, S. ; Tadayon, S. ; Ho, T. ; Pande, K. ; Rice, P. ; Adair, J. ; Ghahremani, M.
Author_Institution :
Microwave Electronics Div., COMSAT Lab., Clarksburg, MD, USA
Abstract :
A 46.3 GHz dielectric resonator stabilized oscillator (DRO) using AlGaAs/GaAs heterojunction bipolar transistor (HBT) and monolithic microwave integrated circuit (MMIC) technology has been designed, fabricated, and characterized. The oscillator exhibits 2.6 dBm output power with 5.8% dc-to-RF efficiency and less than /spl minus/132 dBc/Hz phase noise at 5 MHz offset from the carrier. To our knowledge, this is the highest frequency oscillator ever reported using HBT devices and MMIC technology.<>
Keywords :
MMIC; bipolar integrated circuits; dielectric resonators; heterojunction bipolar transistors; microwave oscillators; 46.3 GHz; 5.8 percent; AlGaAs-GaAs; AlGaAs/GaAs heterojunction bipolar transistor technology; DC-to-RF efficiency; U-band MMIC HBT DRO; dielectric resonator stabilized oscillator; monolithic microwave integrated circuit technology; output power; phase noise; Bipolar integrated circuits; Dielectrics; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; MMICs; Microwave integrated circuits; Microwave oscillators; Microwave technology; Monolithic integrated circuits;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
