U-band MMIC HBT DRO

Author

Chen, S. ; Tadayon, S. ; Ho, T. ; Pande, K. ; Rice, P. ; Adair, J. ; Ghahremani, M.

Author_Institution

Microwave Electronics Div., COMSAT Lab., Clarksburg, MD, USA

Volume

4

Issue

2

fYear

1994

Firstpage

50

Lastpage

52

Abstract

A 46.3 GHz dielectric resonator stabilized oscillator (DRO) using AlGaAs/GaAs heterojunction bipolar transistor (HBT) and monolithic microwave integrated circuit (MMIC) technology has been designed, fabricated, and characterized. The oscillator exhibits 2.6 dBm output power with 5.8% dc-to-RF efficiency and less than /spl minus/132 dBc/Hz phase noise at 5 MHz offset from the carrier. To our knowledge, this is the highest frequency oscillator ever reported using HBT devices and MMIC technology.<>

Keywords

MMIC; bipolar integrated circuits; dielectric resonators; heterojunction bipolar transistors; microwave oscillators; 46.3 GHz; 5.8 percent; AlGaAs-GaAs; AlGaAs/GaAs heterojunction bipolar transistor technology; DC-to-RF efficiency; U-band MMIC HBT DRO; dielectric resonator stabilized oscillator; monolithic microwave integrated circuit technology; output power; phase noise; Bipolar integrated circuits; Dielectrics; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; MMICs; Microwave integrated circuits; Microwave oscillators; Microwave technology; Monolithic integrated circuits;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.267714

Filename

267714