Title :
High-power etched-facet lasers
Author :
Tihanyi, P. ; Wagner, D.K. ; Vollmer, H.J. ; Roza, A.J. ; Harding, C.M. ; Davis, R.J. ; Wolf, E.D.
Author_Institution :
McDonnell-Douglas Astronautics Co., Opto-Electronics Center, Elmsford, USA
Abstract :
We demonstrate, for the first time, laser diodes with anetched facet fabricated by chemically assisted ion beametching, producing 1¿7 W pulsed and 470mW CW output power from one facet. The devices were coated and bonded junction-side-up and tested at room temperature. The single 40 ¿m stripe, 300 ¿m-long devices exhibit 94 mA threshold current and differential quantum efficiencies of 80% pulsed (78% CW).
Keywords :
semiconductor junction lasers; sputter etching; 1.7 W; 300 micron; 40 micron; 470 mW; 80 percent; 94 mA; bonded junction-side-up; chemically assisted ion beam etching; differential quantum efficiencies; etched-facet lasers; laser diodes; output power; room temperature; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870548
