Title :
A new photoconductive sensor for 10.6-μm infrared radiation
Author :
Kikuchi, Kazuro ; Saguchi, Mitsusaburow ; Oshimoto, Ainosuke
Author_Institution :
Dept. of Electr. Eng., Nat. Defence Acad., Yokosuka, Japan
fDate :
3/1/1988 12:00:00 AM
Abstract :
A room-temperature sensor using absorption due to the intervalence band transition at 10.6 μm is investigated. The sensor is fabricated by forming an L-H junction on p-type Ge. It is shown that the device can also be used as a homodyne sensor. The detected voltage depends on the absorption coefficient of the absorption layer. It is possible to improve the detected voltage by increasing the local oscillator power
Keywords :
elemental semiconductors; germanium; infrared detectors; photodetectors; 10.6 micron; Ge; L-H junction; absorption coefficient; absorption layer; detected voltage; homodyne sensor; local oscillator power; photoconductive sensor; room-temperature sensor; Electrodes; Electromagnetic wave absorption; Hot carriers; Infrared sensors; Laser beams; Photoconductivity; Sensor phenomena and characterization; Temperature sensors; Thermal sensors; Voltage;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
