DocumentCode :
1034380
Title :
Frequency conversion in IMPATT diodes
Author :
Evans, W.J. ; Haddad, G.I.
Author_Institution :
Bell Telephone Laboratories, Murray Hill, N. J.
Volume :
16
Issue :
1
fYear :
1969
fDate :
1/1/1969 12:00:00 AM
Firstpage :
78
Lastpage :
87
Abstract :
A large-signal model of the Read-type IMPATT diode has been used to analyze the frequency-mixing properties of the oscillating diode. The self-oscillating, two-port frequency converter is described in terms of its short-circuit admittance parameters. It is shown that in the proper circuit, parametric frequency conversion may result in a negative conductance at the input and output ports of the converter. Therefore, high-gain frequency conversion and parametric amplification are possible. Under some conditions, spurious oscillations may occur due to this negative conductance. Experimental circuits have been built which demonstrate conversion gain and parametric amplification and confirm qualitatively the theoretical results. It is also shown experimentally that some of the sideband noise of the IMPATT oscillator is due to low-frequency noise which is up converted from the bias circuit. Some of this noise can be eliminated by proper circuit design.
Keywords :
Circuit noise; Diodes; Electrons; Frequency conversion; Ionization; Laboratories; Low-frequency noise; Nonlinear equations; Physics; Poisson equations;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1969.16567
Filename :
1475610
Link To Document :
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