• DocumentCode
    1034411
  • Title

    Optical sampling of GHz charge density modulation in silicon bipolar junction transistors

  • Author

    Black, A. ; Courville, C. ; Schultheis, G. ; Heinrich, H.

  • Author_Institution
    Hewlett-Packard Company, Santa Clara Division, Santa Clara, USA
  • Volume
    23
  • Issue
    15
  • fYear
    1987
  • Firstpage
    783
  • Lastpage
    784
  • Abstract
    We report the use of optical sampling employing a gain-switched 1.3¿m semiconductor laser to observe charge density modulation in a 1.5¿m x 5¿m emitter silicon BJT. The overall system bandwidth is 8 GHz. The device under test is switched at frequencies from 100 MHz to 2.5 GHz.
  • Keywords
    bipolar transistors; electro-optical effects; elemental semiconductors; optical variables measurement; probes; semiconductor device testing; silicon; 1.3 micron; 100 MHz to 2.5 GHz; 5 micron; 8 GHz; Si transistors; charge density modulation; optical sampling; overall system bandwidth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870555
  • Filename
    4257891
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1034411