Title :
Optical sampling of GHz charge density modulation in silicon bipolar junction transistors
Author :
Black, A. ; Courville, C. ; Schultheis, G. ; Heinrich, H.
Author_Institution :
Hewlett-Packard Company, Santa Clara Division, Santa Clara, USA
Abstract :
We report the use of optical sampling employing a gain-switched 1.3¿m semiconductor laser to observe charge density modulation in a 1.5¿m x 5¿m emitter silicon BJT. The overall system bandwidth is 8 GHz. The device under test is switched at frequencies from 100 MHz to 2.5 GHz.
Keywords :
bipolar transistors; electro-optical effects; elemental semiconductors; optical variables measurement; probes; semiconductor device testing; silicon; 1.3 micron; 100 MHz to 2.5 GHz; 5 micron; 8 GHz; Si transistors; charge density modulation; optical sampling; overall system bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870555
