DocumentCode
1034554
Title
Transconductance dependence on gate length for GaAs gate SISFETs
Author
Chen, Mei ; Schaff, W.J. ; Tasker, P.J. ; Eastman, L.F.
Author_Institution
Cornell University Ithaca, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures, Ithacha, USA
Volume
23
Issue
15
fYear
1987
Firstpage
800
Lastpage
801
Abstract
We have processed GaAs gate SISFETs with gate lengths varying from 0.75 ¿m to 20 ¿m and shown that the trans-conductance varies inversely with gate length at a rate similar to that observed in MODFETs. Short-gate-length effects are observed for gate lengths less than 4/xm. The intrinsic transconductances both at room temperature and at 77 K of 350mS/¿m and 440mS/mm, respectively, for 0.75/¿m-gate-length devices are as far as we know the highest values ever reported and are essentially flat for gate voltages in the range of 0.2 to 0.9 V.
Keywords
III-V semiconductors; field effect transistors; semiconductor-insulator-semiconductor structures; 0.2 to 0.9 V; 0.75 to 20 micron; 77 K; GaAs; III-V semiconductors; SISFETs; gate lengths; gate voltages; room temperature; transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870567
Filename
4257903
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