Title :
Transconductance dependence on gate length for GaAs gate SISFETs
Author :
Chen, Mei ; Schaff, W.J. ; Tasker, P.J. ; Eastman, L.F.
Author_Institution :
Cornell University Ithaca, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures, Ithacha, USA
Abstract :
We have processed GaAs gate SISFETs with gate lengths varying from 0.75 ¿m to 20 ¿m and shown that the trans-conductance varies inversely with gate length at a rate similar to that observed in MODFETs. Short-gate-length effects are observed for gate lengths less than 4/xm. The intrinsic transconductances both at room temperature and at 77 K of 350mS/¿m and 440mS/mm, respectively, for 0.75/¿m-gate-length devices are as far as we know the highest values ever reported and are essentially flat for gate voltages in the range of 0.2 to 0.9 V.
Keywords :
III-V semiconductors; field effect transistors; semiconductor-insulator-semiconductor structures; 0.2 to 0.9 V; 0.75 to 20 micron; 77 K; GaAs; III-V semiconductors; SISFETs; gate lengths; gate voltages; room temperature; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870567
