DocumentCode
1034563
Title
16 Gbit/s direct modulation of an InGaAsP laser
Author
Gnauck, A.H. ; Bowers, John E.
Author_Institution
AT&T Bell Laboratories, Holmdel, USA
Volume
23
Issue
15
fYear
1987
Firstpage
801
Lastpage
803
Abstract
We describe the first 16Gbit/s electronic multiplexer and use it to measure the characteristics of a high-speed directly modulated InGaAsP 1-3/wn-wavelength laser and a high-speed InGaAs/InP PIN photodetector. The laser rise and fall times are typically 35 ps and 40 ps, respectively. The largest eye opening occurs at an output power of 10mW with an optical extinction ratio of 2-3:1.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; 1.3 micron; 10 mW; 16 Gbit/s; 35 ps; 40 ps; III-V semiconductors; InGaAs-InP; InGaAsP; PIN photodetector; direct modulation; electronic multiplexer; eye opening; fall times; laser; optical extinction ratio; output power; rise time;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870568
Filename
4257904
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