DocumentCode :
1034576
Title :
Hot-spot thermal resistance in transistors
Author :
Reich, Bernard ; Hakim, Edward B.
Author_Institution :
U. S. Army Electronics Command, Fort Monmouth, N. J.
Volume :
16
Issue :
2
fYear :
1969
fDate :
2/1/1969 12:00:00 AM
Firstpage :
166
Lastpage :
170
Abstract :
By the application of an infrared radiometer as the sensor, hot-spot formation is detected and a hot-spot thermal resistance is calculated. Hot-spot formation for both forward- and reverse-biased second breakdown is analyzed. Pulsed dc techniques are used in the investigation, allowing a wide range of possible operating biases to be applied.
Keywords :
Circuits; Electric breakdown; Electric resistance; Electrical resistance measurement; Infrared detectors; Infrared sensors; Pulse measurements; Pulsed power supplies; Thermal resistance; Thermal sensors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1969.16585
Filename :
1475627
Link To Document :
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