DocumentCode
1034643
Title
Boron-nitride as a dielectric material for high-power duplexing devices
Author
Decamp, Edward E. ; True, Jr Robert M ; Edwards, Edward V.
Author_Institution
U.S. Army Electronics Command, Fort Monmouth, N.J.
Volume
16
Issue
2
fYear
1969
fDate
2/1/1969 12:00:00 AM
Firstpage
209
Lastpage
212
Abstract
A dielectric container made of chemical-vapor-deposited (CVD) isotropic boron-nitride (BN) is substituted for the commonly used quartz envelope in a high-power duplexing device. Significant improvements in duplexer performance can be achieved through the use of this material owing to its many favorable characteristics.
Keywords
Chemical vapor deposition; Dielectric constant; Dielectric devices; Dielectric losses; Dielectric materials; Glass; High-K gate dielectrics; Radio frequency; Softening; Thermal conductivity;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1969.16591
Filename
1475633
Link To Document