• DocumentCode
    1034668
  • Title

    The spatial variation of the quasi-Fermi potentials in reverse-biased p+-n junctions and its implications in transition region capacitance calculations

  • Author

    Bulucea, C.D.

  • Volume
    16
  • Issue
    2
  • fYear
    1969
  • fDate
    2/1/1969 12:00:00 AM
  • Firstpage
    220
  • Lastpage
    222
  • Abstract
    The spatial variation of the quasi-Fermi potentials in asymmetrical step p+-n junctions under reverse bias conditions is analyzed following an approximate procedure already described in the literature for the symmetrical junctions. The results obtained in this analysis are used to check the validity of the quasi-equilibrium approximation in capacitance calculations.
  • Keywords
    Capacitance; Doping; Electric potential; Geometry; Germanium; Neodymium; P-n junctions; Photonic band gap; Statistics; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1969.16594
  • Filename
    1475636
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1034668