DocumentCode :
1034802
Title :
Bipolar integrated circuits formed in p-type epitaxial layers
Author :
Murphy, B.T.
Volume :
16
Issue :
2
fYear :
1969
fDate :
2/1/1969 12:00:00 AM
Firstpage :
235
Lastpage :
236
Keywords :
Admittance; Bipolar integrated circuits; Current density; Electron mobility; Epitaxial layers; Frequency; Ionization; Oscillators; Semiconductor diodes; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1969.16607
Filename :
1475649
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1034802
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