Title :
Effect of nonsaturated drift velocity on avalanche-diode performance
Author :
Greiling ; Haddad, G.I.
fDate :
2/1/1969 12:00:00 AM
Keywords :
Admittance; Current density; Electron mobility; Germanium; Ionization; Laboratories; Oscillators; Radio frequency; Semiconductor diodes; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1969.16608
