Title :
InGaAsP buried heterostructure laser with 22 GHz bandwidth and high modulation efficiency
Author :
Olshansky, R. ; Powazinik, W. ; Hill, P. ; Lanzisera, V. ; Lauer, R.B.
Author_Institution :
GTE Laboratories Inc., Waltham, USA
Abstract :
A best-ever 22 GHz CW 3dB bandwidth is reported for a 1.3 ¿m fan InGaAsP vapour-phase-regrown buried heterostructure laser. The device is shown to have excellent modulation efficiency from DC to 20 GHz.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; semiconductor junction lasers; 1.3 micron; 22 GHz; CW operation; InGaAsP laser; modulation efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870594
