Title :
Complementary bipolar transistors for monolithic structures
fDate :
2/1/1969 12:00:00 AM
Keywords :
Admittance; Bipolar transistors; Current density; Electron mobility; Germanium; Ionization; Oscillators; Radio frequency; Semiconductor diodes; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1969.16610
