Title :
An improved model for the slewing behavior of opamps
Author :
Wang, Feng ; Harjani, Ramesh
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
fDate :
10/1/1995 12:00:00 AM
Abstract :
A new time-domain model for the slewing behavior of two-stage opamps is presented. This model includes the effects of the load capacitance, compensation capacitance, device sizes and the nonlinear behavior of the transistors during the slewing period. This model improves on the commonly used constant current models and allows for more predictable designs. The model shows good agreement with simulations. Circuit design results using the traditional and new improved models are presented
Keywords :
capacitance; integrated circuit design; integrated circuit modelling; operational amplifiers; time-domain analysis; circuit design; compensation capacitance; device sizes; load capacitance; nonlinear behavior; slewing behavior model; time-domain model; two-stage opamps; Capacitance; Circuit simulation; Circuit synthesis; Equations; Predictive models; Signal analysis; Switching circuits; Switching converters; Time domain analysis; Voltage;
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
