• DocumentCode
    1034875
  • Title

    Very low-noise HEMTs using a 0.2¿m T-gate

  • Author

    Jones, W. Linwood ; Ageno, S.K. ; Sato, T.Y.

  • Author_Institution
    TRW Electronic System Group, Redondo Beach, USA
  • Volume
    23
  • Issue
    16
  • fYear
    1987
  • Firstpage
    844
  • Lastpage
    845
  • Abstract
    A very low-noise, high-electron-mobility transistor has been fabricated using a 0.2 ¿m T-shaped gate. At 12 GHz, a noise figure of 0.61 dB with an associated gain of 12.58dB has recently been measured. This is the lowest noise figure ever reported for an HEMT at this frequency
  • Keywords
    high electron mobility transistors; solid-state microwave devices; 0.2 micron; 0.61 dB; 12 GHz; 12.58 dB; HEMT; T-shaped gate; high-electron-mobility transistor; noise figure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870597
  • Filename
    4257934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1034875