DocumentCode :
1034937
Title :
Electroabsorption in GaAs quantum-well waveguides
Author :
Dutta, N.K. ; Olsson, N.A.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Volume :
23
Issue :
16
fYear :
1987
Firstpage :
853
Lastpage :
854
Abstract :
The measurement of electroabsorption in GaAs quantum-well waveguide modulators is reported. The absorption of the waveguide modes is ¿20cm1 at ¿10 V applied bias for photon energies ¿90meV below bandgap. The electro-absorption is polarisation-dependent. The absorption for light polarised along the field (TM mode) is smaller (by a factor of four) than for light polarised normal to the field (TE mode). The principal advantage of quantum-well modulators over regular double-heterostructure modulators is in the strong polarisation-dependent absorption. The electro-absorption effect can be used to produce light amplitude modulators, polarisers and photodetectors.
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; optical modulation; optical waveguide components; -10 V; 90 meV; GaAs-AlGaAs; III-V semiconductors; TE mode; TM mode; electroabsorption; light amplitude modulators; photodetectors; photon energies; polarisation-dependent; polarisers; quantum-well waveguides; waveguide modulators;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870603
Filename :
4257940
Link To Document :
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