• DocumentCode
    1034937
  • Title

    Electroabsorption in GaAs quantum-well waveguides

  • Author

    Dutta, N.K. ; Olsson, N.A.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, USA
  • Volume
    23
  • Issue
    16
  • fYear
    1987
  • Firstpage
    853
  • Lastpage
    854
  • Abstract
    The measurement of electroabsorption in GaAs quantum-well waveguide modulators is reported. The absorption of the waveguide modes is ¿20cm1 at ¿10 V applied bias for photon energies ¿90meV below bandgap. The electro-absorption is polarisation-dependent. The absorption for light polarised along the field (TM mode) is smaller (by a factor of four) than for light polarised normal to the field (TE mode). The principal advantage of quantum-well modulators over regular double-heterostructure modulators is in the strong polarisation-dependent absorption. The electro-absorption effect can be used to produce light amplitude modulators, polarisers and photodetectors.
  • Keywords
    III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; optical modulation; optical waveguide components; -10 V; 90 meV; GaAs-AlGaAs; III-V semiconductors; TE mode; TM mode; electroabsorption; light amplitude modulators; photodetectors; photon energies; polarisation-dependent; polarisers; quantum-well waveguides; waveguide modulators;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870603
  • Filename
    4257940