• DocumentCode
    1034963
  • Title

    GaAs/AlGaAs ridge waveguide laser monolithically integrated with a photodetector using ion beam etching

  • Author

    Bouadma, N. ; Grosmaire, S. ; Brillouet, F.

  • Author_Institution
    Centre National d´Etudes des Telecommunications, Laboratoire de Bagneux, Bagneux, France
  • Volume
    23
  • Issue
    16
  • fYear
    1987
  • Firstpage
    855
  • Lastpage
    857
  • Abstract
    A GaAs/AlGaAs ridge waveguide laser is monolithically integrated with a monitoring photodiode. The laser diode and the photodiode have, respectively, vertical and slanted etched facets fabricated by an ion beam etching (IBE) process. The laser threshold currents range from 25 mA to 45 mA and the photodiode has a sensitivity of 5¿A/mW at unbiased voltage.
  • Keywords
    aluminium compounds; gallium arsenide; integrated optoelectronics; semiconductor junction lasers; sputter etching; 25 to 45 mA; GaAs-AlGaAs; ion beam etching; laser threshold currents; monolithically integrated; photodetector; ridge waveguide laser; sensitivity; slanted etched facets; unbiased voltage; vertical etched facets;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870605
  • Filename
    4257942
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1034963