Title :
GaAs/AlGaAs ridge waveguide laser monolithically integrated with a photodetector using ion beam etching
Author :
Bouadma, N. ; Grosmaire, S. ; Brillouet, F.
Author_Institution :
Centre National d´Etudes des Telecommunications, Laboratoire de Bagneux, Bagneux, France
Abstract :
A GaAs/AlGaAs ridge waveguide laser is monolithically integrated with a monitoring photodiode. The laser diode and the photodiode have, respectively, vertical and slanted etched facets fabricated by an ion beam etching (IBE) process. The laser threshold currents range from 25 mA to 45 mA and the photodiode has a sensitivity of 5¿A/mW at unbiased voltage.
Keywords :
aluminium compounds; gallium arsenide; integrated optoelectronics; semiconductor junction lasers; sputter etching; 25 to 45 mA; GaAs-AlGaAs; ion beam etching; laser threshold currents; monolithically integrated; photodetector; ridge waveguide laser; sensitivity; slanted etched facets; unbiased voltage; vertical etched facets;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870605
