• DocumentCode
    1035096
  • Title

    New structure of three-terminal GaAs p+-n--δ(p+)-n--n+ switching device prepared by molecular beam epitaxy

  • Author

    Wang, Y.H. ; Yarn, K.F. ; Chan, C.Y. ; Jame, M.S.

  • Author_Institution
    National Cheng Kung University, Semiconductor and System Laboratories, Institute of Electrical and Computer Engineering, Tainan, Republic of China
  • Volume
    23
  • Issue
    17
  • fYear
    1987
  • Firstpage
    873
  • Lastpage
    874
  • Abstract
    The concept to modulate the internal barrier of a regenerative switching device is proposed. A new structure of three-terminal GaAs p+-n--δ(p+)-n--n+ switching device prepared by molecular beam epitaxy is successfully developed. The third terminal was directly contacted to the δ(p+) barrier using the V-groove etching technique, in which the δ(p+) barrier height can be directly modulated by the external voltage. It is a voltage-controlled device.
  • Keywords
    III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor switches; GaAs switch; MBE; V-groove etching technique; internal barrier modulation; molecular beam epitaxy; regenerative switching device; three-terminal switching device; voltage-controlled device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870618
  • Filename
    4257956
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1035096