Title :
22 GHz 1/4 frequency divider using AlGaAs/GaAs HBTs
Author :
Yamauchi, Yuji ; Nagata, Kazuyuki ; Nakajima, O. ; Ito, H. ; Nittono, T. ; Ishibashi, Takayuki
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
A divide-by-four frequency divider using AIGaAs/GaAs HBTs with GalnAs/GaAs emitter cap layers was designed and fabricated. A maximum toggle frequency of 22.15 GHz was obtained at a power supply voltage of 9 V and a total power dissipation of 712 mW. The minimum input signal power was under 0dBm and the free-running frequency was as high as 20 GHz.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; frequency dividers; gallium arsenide; 22 GHz; 712 mW; 9 V; AlGaAs-GaAs; HBT; digital circuits; divide-by-four frequency divider; free-running frequency; frequency divider; maximum toggle frequency; minimum input signal power; power supply voltage; total power dissipation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870623
