Title :
Very low threshold current density of a GaInP/AlGaInP double-heterostructure laser grown by MOCVD
Author :
Nakano, K. ; Ikeda, M. ; Toda, A. ; Kojima, C.
Author_Institution :
Sony Corporation, Research Center, Yokohama, Japan
Abstract :
A GaInP/AlGaInP broad-area (60 × 500 ¿m2) laser grown by MOCVD has obtained a very low threshold current density Jth of 1.1 kA/cm2. The dependence of Jth and differential quantum efficiency on cavity length was measured to determine internal quantum efficiency, losses and the gain constant, which were found to be comparable to these characteristics in an AlGaAs laser.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium compounds; indium compounds; semiconductor junction lasers; 500 micron; DH lasers; GaInP-AlGaInP lasers; MOCVD; cavity length; differential quantum efficiency; double-heterostructure laser; gain constant; internal quantum efficiency; losses; low threshold current density; visible light lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870632
